FDB390N15A mosfet equivalent, n-channel mosfet.
* RDS(on) = 33.5 mΩ (Typ.) @ VGS = 10 V, ID = 27 A
* Fast Switching Speed
* Low Gate Charge, QG = 14.3 nC (Typ.)
* High Performance Trench Technology for .
* Consumer Appliances
* LED TV
* Synchronous Rectification
* Uninterruptible Power Supply
* Micro So.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
* Consumer Appliances
* .
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