FDB3502 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A
* 100% UIL Tested
* RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semicon.

Description

* Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A
* 100% UIL Tested
* RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state re.

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