FDB33N25 mosfet equivalent, n-channel mosfet.
* RDS(on) = 94 mW (Max.) @ VGS = 10 V, ID = 16.5 A
* Low Gate Charge (Typ. 36.8 nC)
* Low Crss (Typ. 39 pF)
* 100% Avalanche Tested
* These Devices ar.
such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features
UniFETt MOSFET is onsemi’s high voltage MOSFET family
based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device fam.
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