FDB3860 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A
* High performance trench technology for extremely low rDS(on)
* 100% UIL tested
* RoHS Compliant
General.
Applications
* DC-AC Conversion
* Synchronous Rectifier
D
D
G S TO-263AB
FDB Series
G
S
MOSFET Maximum R.
This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.
Applica.
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