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FDB082N15A - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Synchronous Rectification for ATX / Server / Telecom PSU Batter

Key Features

  • RDS(on) = 6.7 mΩ (Typ. ) @ VGS = 10 V, ID = 75 A.
  • Fast Switching Speed.
  • Low Gate Charge, QG = 64.5 nC (Typ. ).
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDB082N15A — N-Channel PowerTrench® MOSFET April 2015 FDB082N15A N-Channel PowerTrench® MOSFET 150 V, 117 A, 8.2 mΩ Features • RDS(on) = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge, QG = 64.5 nC (Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.