FDB082N15A datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* RDS(on) = 6.7 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge, QG = 64.5 nC (Typ.)
* High Performance Trench Technology for E.

Application

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor drives and U.

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications
* Synchronous Rectification f.

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