FCD9N60NTM mosfet equivalent, n-channel mosfet.
* RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A
* Ultra Low Gate Charge (Typ.Qg = 17.8nC)
* Low Effective Output Capacitance
* 100% Avalanche Tested
.
D
G S
D G
D-PAK (TO-252)
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR.
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precise proces.
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