Datasheet Details
| Part number | FCD260N65S3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 260.81 KB |
| Description | N-Channel MOSFET |
| Download | FCD260N65S3 Download (PDF) |
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Overview: isc N-Channel MOSFET Transistor.
| Part number | FCD260N65S3 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 260.81 KB |
| Description | N-Channel MOSFET |
| Download | FCD260N65S3 Download (PDF) |
|
|
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 650 V ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 90 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.39 ℃/W FCD260N65S3 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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FCD260N65S3 | N-Channel MOSFET | ON Semiconductor |
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