FCD360N65S3R0 mosfet equivalent, n-channel mosfet.
* 700 V @ TJ = 150_C
* Typ. RDS(on) = 310 mW
* Ultra Low Gate Charge (Typ. Qg = 18 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
*.
* Computing / Display Power Supplies
* Telecom / Server Power Supplies
* Industrial Power Supplies
* Lig.
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored t.
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