* RDS(ON) = 3.5Ω @ VGS = 10V, ID = 0.22A RDS(ON) = 6.0Ω @ VGS = 4.5V, ID = 0.22A
* High density cell design for extremely low RDS(ON)
* Rugged and Reliable

such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features
* RDS(ON) .

These N-Channel enhancement mode field effect transistor. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.These products are particularly suited for low voltage, low cur.

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