Datasheet4U Logo Datasheet4U.com

BSS138 - N-Channel MOSFET

Description

These N

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance while provide rugged, reliable, and fast switching performance.

Features

  • 0.22 A, 50 V.
  • RDS(on) = 3.5 W @ VGS = 10 V.
  • RDS(on) = 6.0 W @ VGS = 4.5 V.
  • High Density Cell Design for Extremely Low RDS(on).
  • Rugged and Reliable.
  • Compact Industry Standard SOT.
  • 23 Surface Mount Package.
  • HBM Class 0A, MM Class M2 (Note 3).
  • This Device is Pb.
  • Free and Halogen Free DATA SHEET www. onsemi. com D G S SOT.
  • 23.
  • 3 CASE 318.
  • 08.

📥 Download Datasheet

Datasheet Details

Part number BSS138
Manufacturer onsemi
File Size 242.05 KB
Description N-Channel MOSFET
Datasheet download datasheet BSS138 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BSS138 N-Channel MOSFET Fairchild Semiconductor
BSS138 N-Channel 50-V(D-S) MOSFET H&M Semiconductor
BSS138 N-Channel MOSFET MCC
BSS138 N-Channel MOSFET National Semiconductor
BSS138 SMD Power MOSFET Transistor TAITRON

Other Datasheets by onsemi

Part Number Description
BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS138L N-Channel Power MOSFET
BSS138W N-Channel FET
BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor
BSS123LT1 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • 0.22 A, 50 V ♦ RDS(on) = 3.5 W @ VGS = 10 V ♦ RDS(on) = 6.0 W @ VGS = 4.
Published: |