BSS138
Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
0.22 A, 50V. RDS(ON) = 3.5Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). Rugged and Relaible pact industry standard SOT-23 surface mount package.
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage
T A = 25°C unless otherwise noted
BSS138 50 50 ± 20 ± 40 0.22 0.88 0.36 2.8 -55 to 150 300
Units V V V
Drain-Gate Voltage (RGS < 20KΩ) Gate-Source Voltage
- Continuous
- Non Repetitive (TP < 50...
