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BSS138 - N-CHANNEL MOSFET

Description

This device employs advanced MOSFET technology and

Features

  • S.
  • RDS(ON) ≤ 3.5Ω @ VGS=10 V, ID=0.22A RDS(ON) ≤ 6.0Ω @ VGS=4.5V, ID=0.22A RDS(ON) ≤ 8.0Ω @ VGS=2.5V, ID=0.20A.
  • Low Capacitance.
  • Low Gate Charge.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • SYMBOL 2 1 SOT-23-3 (JEDEC TO-236) 3 12 SOT-323.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD BSS138 N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE Power MOSFET 3  DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.  FEATURES * RDS(ON) ≤ 3.5Ω @ VGS=10 V, ID=0.22A RDS(ON) ≤ 6.0Ω @ VGS=4.5V, ID=0.22A RDS(ON) ≤ 8.0Ω @ VGS=2.5V, ID=0.
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