BSS138
Description
This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Key Features
- RDS(ON) ≤ 3.5Ω @ VGS=10 V, ID=0.22A RDS(ON) ≤ 6.0Ω @ VGS=4.5V, ID=0.22A RDS(ON) ≤ 8.0Ω @ VGS=2.5V, ID=0.20A
- Low Capacitance * Low Gate Charge * Fast Switching Capability * Avalanche Energy Specified
- SYMBOL 2 1 SOT-23-3 (JEDEC TO-236) 3
