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2N7000TA - Advanced Small Signal MOSFET

Download the 2N7000TA datasheet PDF. This datasheet also covers the 2N7000BU variant, as both devices belong to the same advanced small signal mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

These products minimize onstate resistance while providing rugged, reliable, and fast switching performance.

Key Features

  • Fast Switching Times.
  • Improved Inductive Ruggedness.
  • Lower Input Capacitance.
  • Extended Safe Operating Area.
  • Improved High-Temperature Reliability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N7000BU_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2N7000TU Advanced Small-Signal MOSFET ON Semiconductor
2N7000 N-Channel DMOS FET Microchip
2N7000 TMOS FET Transistor Motorola Inc
2N7000 N-channel MOSFET NXP
2N7000 N-Channel MOSFET NTE

Other Datasheets by Fairchild (onsemi)

Part Number Description
2N7000 N-Channel Transistor
2N7000BU Advanced Small Signal MOSFET
2N7002 N-channel FET
2N7002DW N-channel FET
2N7002K N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N7000BU / 2N7000TA — Advanced Small-Signal MOSFET September 2016 2N7000BU / 2N7000TA Advanced Small-Signal MOSFET Features • Fast Switching Times • Improved Inductive Ruggedness • Lower Input Capacitance • Extended Safe Operating Area • Improved High-Temperature Reliability Description These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products minimize onstate resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A.