Datasheet4U Logo Datasheet4U.com

NDS355AN - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Description

SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

Features

  • 1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ D G S Absolute Maximum Rati.

📥 Download Datasheet

Datasheet Details

Part number NDS355AN
Manufacturer Fairchild (onsemi)
File Size 60.76 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet NDS355AN Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor ON Semiconductor
NDS351AN N-Channel MOSFET ON Semiconductor
NDS331N N-Channel MOSFET VBsemi
NDS36P 16M x 16 bit Synchronous DRAM INSIGNIS
NDS02ZG-M6 NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs Power-One

Other Datasheets by Fairchild (onsemi)

Part Number Description
NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS351AN N-Channel MOSFET
NDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features 1.7A, 30 V, RDS(ON) = 0.125 Ω @ VGS = 4.5 V RDS(ON) = 0.085 Ω @ VGS = 10 V.
Published: |