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NDS351AN - N-Channel MOSFET

Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

  • 1.4 A, 30 V. RDS(ON) = 160 mΩ @ VGS = 10 V RDS(ON) = 250 mΩ @ VGS = 4.5 V.
  • Ultra-Low gate charge.
  • Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
  • High performance trench technology for extremely low RDS(ON) DD SuperSOTTM-3 G S Absolute Maximum Ratings TA=25oC unless otherwise not.

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NDS351AN June 2003 NDS351AN N-Channel, Logic Level, PowerTrench® MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features • 1.4 A, 30 V. RDS(ON) = 160 mΩ @ VGS = 10 V RDS(ON) = 250 mΩ @ VGS = 4.