FNK08N03D datasheet, mosfet equivalent, FNK

Features and benefits

* VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V (Typ:5mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

Application

General Features
* VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V (Typ:5mΩ)
* High density cell design for ultra .

Description

TheFNK08N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =30V,ID =80A RDS(ON) <5.9mΩ @ VGS=10V (Typ:5mΩ)
* High dens.

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