FNK03N02L mosfet equivalent, n-channel power mosfet.
* VDS =30V,ID =100A RDS(ON) <1.9mΩ @ VGS=10V
(Typ:1.4mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current .
General Features
* VDS =30V,ID =100A RDS(ON) <1.9mΩ @ VGS=10V
(Typ:1.4mΩ)
* High density cell design for ult.
The FNK03N02L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =30V,ID =100A RDS(ON) <1.9mΩ @ VGS=10V
(Typ:1.4mΩ)
* High .
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