* VDS =30V,ID =100A RDS(ON) <2.5mΩ @ VGS=10V (Typ:1.9mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current .

General Features
* VDS =30V,ID =100A RDS(ON) <2.5mΩ @ VGS=10V (Typ:1.9mΩ)
* High density cell design for ult.

The FNK03N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS =30V,ID =100A RDS(ON) <2.5mΩ @ VGS=10V (Typ:1.9mΩ)
* High d.

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