FNK03P05E mosfet equivalent, p-channel power mosfet.
* VDS =-30V,ID =-50A RDS(ON) < 9mΩ @ VGS=-10V
Marking and pin assignment
D G
S Schematic diagram
* High density cell design for ultra low Rdson
* Fully cha.
General Features
* VDS =-30V,ID =-50A RDS(ON) < 9mΩ @ VGS=-10V
Marking and pin assignment
D G
S Schematic diagra.
The FNK03P05E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =-30V,ID =-50A RDS(ON) < 9mΩ @ VGS=-10V
Marking and pin assignm.
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