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PTF10107 - 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor

Description

The PTF 10107 is a 5

watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz.

It operates at 40% efficiency with 11 dB gain.

Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

Guaranteed Performance at 1.99

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Datasheet Details

Part number PTF10107
Manufacturer Ericsson
File Size 83.73 KB
Description 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10107 Datasheet

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PTF10100 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTF 10107 5 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability • • • • • Typical Output Power & Efficiency vs. Input Power 8 100 Output Pow er Efficiency 60 Efficiency (%) X 80 Output Power (Watts) 7 6 5 4 3 2 1 0 0.0 A-1 101 234 07 569 845 VDD = 26 V IDQ = 70 mA f = 2.0 GHz 0.1 0.2 0.3 0.4 40 20 0 0.
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