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PTF10112 - 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description

The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz.

It is rated at 60 watts power output.

Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

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Datasheet Details

Part number PTF10112
Manufacturer Ericsson
File Size 324.91 KB
Description 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10112 Datasheet

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Other Datasheets by Ericsson

Part Number Description
PTF10111 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor
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Full PDF Text Transcription

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PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • • INTERNALLY MATCHED Guaranteed Performance at 1.93, 1.99 GHz, 28 V - Output Power = 60 Watts Min - Power Gain = 12 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs.
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