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PTF10120 - 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor

Description

The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz.

It is rated at 120 watts power output.

Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

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Datasheet Details

Part number PTF10120
Manufacturer Ericsson
File Size 420.29 KB
Description 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10120 Datasheet

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Other Datasheets by Ericsson

Part Number Description
PTF10122 50 Watts WCDMA/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
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Full PDF Text Transcription

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PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • INTERNALLY MATCHED Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability • • • • • Typical Output Power vs.
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