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PTF10125 - 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor

Description

The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB.

It is rated at 135 watts minimum power outpt.

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Datasheet Details

Part number PTF10125
Manufacturer Ericsson
File Size 291.84 KB
Description 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10125 Datasheet

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Full PDF Text Transcription

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PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated at 135 watts minimum power outpt. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • • INTERNALLY MATCHED Performance at 1.5 GHz, 28 V - Output Power = 135 Watts Min - Power Gain = 12.5 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs.
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