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PTF10100 - 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor

Description

The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz.

It is rated at 165 watts power output.

Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.

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Datasheet Details

Part number PTF10100
Manufacturer Ericsson
File Size 163.98 KB
Description 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor
Datasheet download datasheet PTF10100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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e PTF 10100 165 Watts, 860–900 MHz LDMOS Field Effect Transistor Description The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 165 Watts - Power Gain = 13.0 dB Typ - Drain Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% lot traceability Typical Output Power & Efficiency vs. Input Power 180 60 Efficiency Output Power (Watts) Efficiency (%) 140 45 100 30 A-12 3456 9917 1010 0 VDD = 28.
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