• Part: PTB20180
  • Manufacturer: Ericsson
  • Size: 43.21 KB
Download PTB20180 Datasheet PDF
PTB20180 page 2
Page 2

PTB20180 Description

The 20180 is a class AB, NPN, mon emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability.