EN29F010 Datasheet, Eon Silicon Solution

* 5.0V operation for read/write/erase operations
* Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns
* Sector Architecture: - 8 uniform sectors of 16Kbytes e.

The EN29F010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 128K bytes with 8 bits per byte, the 1M of memory is arranged in eight uniform sectors of 16Kbytes each. Any byte can be programmed typically in .