EN29F080 Description
The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs.
EN29F080 Key Features
- 5.0V ± 10%, single power supply operation
- Minimizes system level power requirements
- Manufactured on 0.35 µm process technology
- High performance
- Access times as fast as 45 ns
- Low power consumption 25 mA typical active read current 30 mA typical program/erase current 1 µA typical standby current
- Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
- Low Power Active Current