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EN29F080 - 8 Megabit (1024K x 8-bit) Flash Memory

General Description

The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile flash memory.

Organized into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of 64Kbytes each.

Any byte can be programmed typically in 10µs.

Key Features

  • 5.0V ± 10%, single power supply operation - Minimizes system level power requirements.
  • Manufactured on 0.35 µm process technology.
  • High performance - Access times as fast as 45 ns.
  • Low power consumption 25 mA typical active read current 30 mA typical program/erase current 1 µA typical standby current (standard access time to active mode) Flexible Sector Architecture: 16 uniform sectors of 64Kbytes each Supports full chip erase Individual sector era.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EN29F080 www.DataSheet4U.com EN29F080 8 Megabit (1024K x 8-bit) Flash Memory FEATURES • 5.0V ± 10%, single power supply operation - Minimizes system level power requirements • Manufactured on 0.