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EN29F002N - 2 Megabit (256K x 8-bit) Flash Memory

Download the EN29F002N datasheet PDF. This datasheet also covers the EN29F002 variant, as both devices belong to the same 2 megabit (256k x 8-bit) flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile flash memory.

Key Features

  • 5.0V ± 10% for both read/write operation.
  • Read Access Time - 45ns, 55ns, 70ns, and 90ns.
  • Fast Read Access Time - 70ns with Cload = 100pF - 45ns, 55ns with Cload = 30pF.
  • Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors.
  • Boot Block Top/Bottom Programming Architecture.
  • High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Ch.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EN29F002_ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EN29F002N
Manufacturer Unknown Manufacturer
File Size 267.13 KB
Description 2 Megabit (256K x 8-bit) Flash Memory
Datasheet download datasheet EN29F002N Datasheet

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Other Datasheets by Unknown Manufacturer

Part Number Description
EN29F002 2 Megabit (256K x 8-bit) Flash Memory
EN29F002A 2 Megabit (256K x 8-bit) Flash Memory
EN29F040 4 Megabit (512K x 8-bit) Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
EN29F002 / EN29F002N EN29F002 / EN29F002N 2 Megabit (256K x 8-bit) Flash Memory FEATURES • 5.0V ± 10% for both read/write operation • Read Access Time - 45ns, 55ns, 70ns, and 90ns • Fast Read Access Time - 70ns with Cload = 100pF - 45ns, 55ns with Cload = 30pF • Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and three 64K byte main Sectors • Boot Block Top/Bottom Programming Architecture • High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3.