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EN29F040 - 4 Megabit (512K x 8-bit) Flash Memory

Description

The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory.

Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each.

Any byte can be programmed typically in 10µs.

Features

  • 5.0V operation for read/write/erase operations.
  • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns.
  • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3.5s typical.
  • JED.

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Datasheet Details

Part number EN29F040
Manufacturer Unknown Manufacturer
File Size 223.38 KB
Description 4 Megabit (512K x 8-bit) Flash Memory
Datasheet download datasheet EN29F040 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program/erase speed Byte program time: 10µs typical Sector erase time: 500ms typical Chip erase time: 3.
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