M24L416256SA ram equivalent, 4-mbit (256k x 16) pseudo static ram.
* Wide voltage range: 2.7V
–3.6V
* Access time: 55 ns, 60 ns and 70 ns
* Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Ty.
such as cellular telephones. The device can be put into standby mode when deselected ( CE HIGH or both BHE and BLE are H.
of read and write modes.
Functional Description
The M24L416256SA is a high-performance CMOS Pseudo static RAM organized as 256K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide .
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