M24L216128SA Datasheet, Elite Semiconductor Memory Technology

* Wide voltage range: 2.7V
  –3.6V
* Access Time: 55 ns, 70 ns
* Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — Typical activ.

such as cellular telephones. The device can be put into standby mode when deselected ( CE HIGH or both BHE and BLE are H.

of read and write modes. Functional Description The M24L216128SA is a high-performance CMOS Pseudo Static RAM organized as 128K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide .

M24L216128DA

M24L28256DA

M24L28256SA

M24L16161DA

M24L16161ZA

M24L416256DA

M24L416256SA

M24L48512DA

M24L48512SA

M24L816512DA

M24L816512SA

M24LR64-R

M24LR64E-R