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M24L16161ZA - 16-Mbit (1M x 16) Pseudo Static RAM

Description

of read and write modes.

To enable Deep Sleep Mode, drive ZZ LOW.

See the Truth Table for a complete description of Read, Write, and Deep Sleep mode.

Features

  • ‧Wide voltage range: 2.2V.
  • 3.6V.
  • Access Time: 70 ns.
  • Ultra-low active power.
  • Typical active current: 3 mA @ f = 1 MHz.
  • Typical active current: 18 mA @ f = fmax.
  • Ultra low standby power.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power.
  • Deep Sleep Mode.
  • Offered in a Lead-Free 48-ball BGA package.
  • Operating Temperature:.
  • 40°C to +85°C www. DataSheet4U. com M24L16161ZA 16-Mbit (1.

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Datasheet Details

Part number M24L16161ZA
Manufacturer Elite Semiconductor Memory Technology
File Size 413.33 KB
Description 16-Mbit (1M x 16) Pseudo Static RAM
Datasheet download datasheet M24L16161ZA Datasheet

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Full PDF Text Transcription

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ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161ZA Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.0 1/15 ESMT PSRAM Features ‧Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active power— Typical active current: 3 mA @ f = 1 MHz— Typical active current: 18 mA @ f = fmax • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed/power • Deep Sleep Mode • Offered in a Lead-Free 48-ball BGA package • Operating Temperature: –40°C to +85°C www.DataSheet4U.com M24L16161ZA 16-Mbit (1M x 16) Pseudo Static RAM are disabled ( OE HIGH), both Byte High Enable and Byte Low Enable are disabled ( BHE , BLE HIGH), or during a write operation ( CE LOW and WE LOW).
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