‧Wide voltage range: 2.2V
  –3.6V
* Access Time: 70 ns
* Ultra-low active power— Typical active current: 3 mA @ f = 1 MHz— Typical active current: 18.

such as cellular telephones. The device can be put into standby mode when deselected ( OE HIGH or both BHE and BLE are H.

of read and write modes. To enable Deep Sleep Mode, drive ZZ LOW. See the Truth Table for a complete description of Read, Write, and Deep Sleep mode. Functional Description[1] The M24L16161ZA is a high-performance CMOS Pseudo Static RAM organized as.

M24L16161DA

M24L216128DA

M24L216128SA

M24L28256DA

M24L28256SA

M24L416256DA

M24L416256SA

M24L48512DA

M24L48512SA

M24L816512DA

M24L816512SA

M24LR64-R

M24LR64E-R

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