ME45P04-G datasheet, mosfet equivalent, ETC

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Features and benefits

* RDS(ON)≦18mΩ@VGS=-10V
* RDS(ON)≦25mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC cur.

Application

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter PIN CONFIGURATI.

Description

The ME45P04-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.

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