ME4542D-G mosfet equivalent, n- & p-channel mosfet.
RDS(ON)
mΩ@VGS=10V (N-Ch)
RDS(ON) mΩ@VGS=4.5V (N-Ch)
RDS(ON) mΩ@VGS=-10V (P-Ch)
RDS(ON) mΩ@VGS=-4.5V (P-Ch)
Super high density cell design for extremely low RDS(ON).
Power Management DC/DC Converter LCD TV & Monitor Display inverter CCFL inverter LCD Display inverter
e Ordering In.
The ME4542D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices a.
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