ME45P04-G Datasheet | Matsuki

ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME45P04-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. Features - RDS(ON)≦18mΩ@VGS=-10V - RDS(ON)≦25mΩ@VGS=-4.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and...