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ME45P04-G - P-Channel MOSFET

Download the ME45P04-G datasheet PDF. This datasheet also covers the ME45P04 variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME45P04-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦18mΩ@VGS=-10V.
  • RDS(ON)≦25mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME45P04_Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME45P04-G
Manufacturer Matsuki
File Size 960.76 KB
Description P-Channel MOSFET
Datasheet download datasheet ME45P04-G Datasheet

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Other Datasheets by Matsuki

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME45P04/ME45P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME45P04-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits , and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦18mΩ@VGS=-10V ● RDS(ON)≦25mΩ@VGS=-4.
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