* 1.8V power supply
* LVCMOS compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs - CAS Latency (3) - Burst Le.

The M52D2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous de.

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