M15T5121632A sdram equivalent, 4m x 16-bit x 8 banks ddr3 sdram.
and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential c.
The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are syn.
The 512Mb Double-Data-Rate-3 (DDR3(L)) DRAM is double data rate architecture to achieve high-speed operation. It is internally configured as an eight-bank DRAM.
The 512Mb chip is organized as 4Mbit x 16 I/Os x 8 bank devices. These synchronous device.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 7.24MB)