Datasheet Details
| Part number | DMN2016LHAB |
|---|---|
| Manufacturer | Diodes Incorporated |
| File Size | 292.99 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet | DMN2016LHAB-Diodes.pdf |
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Overview: NAEDWVPARNOCDEUICNTF O R M A T I O N DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on)max 15.5mΩ @ VGS = 4.5V 16.5mΩ @ VGS = 4.0V 19mΩ @ VGS = 3.1V 20mΩ @ VGS = 2.5V 30mΩ @ VGS = 1.8V ID TA = +25°C 7.5A 7.3A 6.9A 6.7A 5.
| Part number | DMN2016LHAB |
|---|---|
| Manufacturer | Diodes Incorporated |
| File Size | 292.99 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet | DMN2016LHAB-Diodes.pdf |
|
|
|
Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications • Case: U-DFN2030-6 • Case Material: Molded Plastic, “Green” Molding pound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – NiPdAu over Copper leadframe.
| Part Number | Description |
|---|---|
| DMN2016LFG | Dual N-Channel MOSFET |
| DMN2016UTS | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2010UDZ | DUAL N-CHANNEL MOSFET |
| DMN2011UFDE | N-Channel MOSFET |
| DMN2011UFDF | 20V N-CHANNEL MOSFET |
| DMN2011UFX | Dual N-Channel MOSFET |
| DMN2011UTS | N-CHANNEL MOSFET |
| DMN2013UFDE | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN2013UFX | Dual N-Channel MOSFET |
| DMN2014LHAB | Dual N-Channel MOSFET |