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DMN2016LHAB - Dual N-Channel MOSFET

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Case: U-DFN2030-6 Case Material: Molded Pl

Features

  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).

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NAEDWVPARNOCDEUICNTF O R M A T I O N DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on)max 15.5mΩ @ VGS = 4.5V 16.5mΩ @ VGS = 4.0V 19mΩ @ VGS = 3.1V 20mΩ @ VGS = 2.5V 30mΩ @ VGS = 1.8V ID TA = +25°C 7.5A 7.3A 6.9A 6.7A 5.4A Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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