* Rated to +175C
  – Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching (UIS) Test in Production
  .

* High Conversion Efficiency
* Low RDS(on)
  – Minimizes On-State Losses
* Low Input Capacitan.

and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(on) yet maintain superior switching performance. This device is ideal for use in:
* Motor controls
* DC-DC converters
* Power managements .

DMTH15H017SPSW

DMTH10H003SPSW

DMTH10H005LCT

DMTH10H005SCT

DMTH10H009LFG

DMTH10H009LPS

DMTH10H009LPSQ

DMTH10H009SPS

DMTH10H009SPSQ

DMTH10H010LCT

DMTH10H010LPS

DMTH10H010SCT

DMTH10H010SPS

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