DMTH15H017SPSWQ Datasheet, DIODES

* Rated to +175C
  – Ideal for High Ambient Temperature Environments
* 100% Unclamped Inductive Switching (UIS) Test in Production
  .

* High Conversion Efficiency
* Low RDS(on)
  – Minimizes On-State Losses
* Low Input Capacitan.

and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(on) yet maintain superior switching performance. This device is ideal for use in:
* Motor controls
* DC-DC converters
* Power managements .

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