BVDSS 100V RDS(ON) Max 8.6mΩ @ VGS = 10V ID TC = +25°C 98.4A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet ma.

* High Conversion Efficiency
* Low RDS(ON)
  – Minimizes On-State Losses
* Low Input Capacitan.

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch.
* Rated to +175C
 &n.

DMTH10H010LCT

DMTH10H010SCT

DMTH10H010SPS

DMTH10H015LK3

DMTH10H015LPS

DMTH10H015SK3

DMTH10H015SK3Q

DMTH10H015SPS

DMTH10H015SPSQ

DMTH10H017LPD

DMTH10H017LPDQ

DMTH10H003SPSW

DMTH10H005LCT

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