BVDSS 100V RDS(ON) Max 8mΩ @ VGS = 10V 12.5mΩ @ VGS = 4.5V ID Max TC = +25°C 100A 81A Description This new generation N-Channel Enhancement Mode MOSFET is designed to.

* Motor Control
* DC-DC Converters
* Power Management
* Rated to +175°C
  – Ideal for Hig.

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Applications
* Motor Control

DMTH10H009LPSQ

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DMTH10H009SPS

DMTH10H009SPSQ

DMTH10H003SPSW

DMTH10H005LCT

DMTH10H005SCT

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DMTH10H010LPS

DMTH10H010SCT

DMTH10H010SPS

DMTH10H015LK3

DMTH10H015LPS

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