* Low On-Resistance
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface M.

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, m.

and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
* Battery Charging
* Power Management F.

DMN2990UFA

DMN2990UFZ

DMN2990UDJ

DMN2990UDJQ

DMN2991UDJ

DMN2991UDR4

DMN2991UFB4

DMN2991UFZQ

DMN2991UT

DMN2991UTQ

DMN29B36G

DMN29B43G

DMN29B50G

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts