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MTC3586BDFA6 Datasheet, Cystech Electonics

MTC3586BDFA6 mosfet equivalent, n- and p-channel enhancement mode mosfet.

MTC3586BDFA6 Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 423.86KB)

MTC3586BDFA6 Datasheet
MTC3586BDFA6
Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 423.86KB)

MTC3586BDFA6 Datasheet

Features and benefits


* Simple drive requirement
* Low gate charge
* Low on-resistance
* Fast switching speed
* Pb-free lead plating and halogen-free package Equivalent Ci.

Application

Features
* Simple drive requirement
* Low gate charge
* Low on-resistance
* Fast switching speed
*.

Description

RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V) The MTC3586BDFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2*2-6L package, providing the designer with the best combination of fast sw.

Image gallery

MTC3586BDFA6 Page 1 MTC3586BDFA6 Page 2 MTC3586BDFA6 Page 3

TAGS

MTC3586BDFA6
AND
P-Channel
Enhancement
Mode
MOSFET
Cystech Electonics

Manufacturer


Cystech Electonics

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