MTC3586DFA6 - P- & N-Channel Enhancement Mode Power MOSFET
CYStech Electronics
General Description
RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V)
The MTC3586DFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2
2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resist
Key Features
Simple drive requirement.
Low gate charge.
Low on-resistance.
Fast switching speed.
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3586DFA6
Outline
DFN2×2-6L
G：Gate S：Source D：Drain
Ordering Information
Device
Package
MTC358.
Full PDF Text Transcription for MTC3586DFA6 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MTC3586DFA6. For precise diagrams, and layout, please refer to the original PDF.
CYStech Electronics Corp. Spec. No. : C835DFA6 Issued Date : 2013.06.03 Revised Date : 2013.10.30 Page No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTC3586DFA6 N-C...
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ge No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTC3586DFA6 N-CH BVDSS 20V ID 5A(VGS=4.5V) 27mΩ(VGS=4.5V) P-CH -20V -3.3A(VGS=-4.5 V) 78mΩ(VGS=-4.5V) Description RDSON(TYP.) 37mΩ(VGS=2.5V) 115mΩ(VGS=-2.5V) 82mΩ(VGS=1.5V) 280mΩ(VGS=-1.5V) The MTC3586DFA6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN2*2-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2*2-6L package is universally preferred for all commercial-industrial surface mount applications.
MTC3586DFA6 Datasheet
