MTC3588G6 - P- & N-Channel Enhancement Mode Power MOSFET
CYStech Electronics
Key Features
Simple drive requirement.
Low gate charge.
Low on-resistance.
Fast switching speed.
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTC3588G6
Outline
TSOP-6
D2 S1 D1
G：Gate S：Source D：Drain
G2 S2 G1
Ordering Information
Device
Package
MTC3588G6-0-T1-G
TSOP-6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and gr.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
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CYStech Electronics Corp.
Spec. No. : C102G6 Issued Date : 2016.05.03 Revised Date : Page No. : 1/13
N- And P-Channel Enhancement Mode Power MOSFET
MTC3588G6 BVDSS
N-CH 14V
ID @ TA=25 °C 5.4A(VGS=4.5V)
17.6mΩ(VGS=4.5V)
RDSON(TYP.)
24.7mΩ(VGS=2.5V) 39.5mΩ(VGS=1.8V)
67.3mΩ(VGS=1.5V)
P-CH -14V -3.6A(VGS=-4.5 V)
45.1mΩ(VGS=-4.5V)
65.6mΩ(VGS=-2.5V)
88.5mΩ(VGS=-1.8V)
154.3mΩ(VGS=-1.
MTC3588G6 Datasheet
