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CYK256K16SCCB - 4-Mbit (256K x 16) Pseudo Static RAM

General Description

in portable applications such as cellular telephones.

The device can be put into standby mode reducing power consumption dramatically when deselected (CE1 LOW, CE2 HIGH or both BHE and BLE are HIGH).

Key Features

  • Advanced low-power MoBL® architecture.
  • High speed: 55 ns, 60 ns and 70 ns.
  • Wide voltage range: 2.7V to 3.3V.
  • Typical active current: 1 mA @ f = 1 MHz.
  • Low standby power.
  • Automatic power-down when deselected www. DataSheet4U. com Functional.

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Part Number Description Manufacturer

Other Datasheets by Cypress (now Infineon)

Part Number Description
CYK256K16MCCB 4-Mbit (256K x 16) Pseudo Static RAM
CYK001M16SCCA 16-Mbit (1M x 16) Pseudo Static RAM
CYK001M16ZCCA 16-Mbit (1M x 16) Pseudo Static RAM
CYK128K16MCCB 2-Mbit (128K x 16) Pseudo Static RAM
CYK128K16SCCB 2-Mbit (128K x 16) Pseudo Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYK256K16SCCB 4-Mbit (256K x 16) Pseudo Static RAM Features • Advanced low-power MoBL® architecture • High speed: 55 ns, 60 ns and 70 ns • Wide voltage range: 2.7V to 3.3V • Typical active current: 1 mA @ f = 1 MHz • Low standby power • Automatic power-down when deselected www.DataSheet4U.com Functional Description[1] in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption dramatically when deselected (CE1 LOW, CE2 HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH, CE2 LOW, OE is deasserted HIGH), or during a write operation (Chip Enabled and Write Enable WE LOW).