Datasheet4U Logo Datasheet4U.com

CYK256K16MCCB - 4-Mbit (256K x 16) Pseudo Static RAM

Description

of read and write modes.

The CYK256K16MCCB is a high-performance CMOS Pseudo static RAM organized as 256K words by 16 bits that supports an asynchronous memory interface.

Features

  • Wide voltage range: 2.70V.
  • 3.30V.
  • Access time: 55 ns, 60 ns and 70 ns.
  • Ultra-low active power.
  • Typical active current: 1 mA @ f = 1 MHz.
  • Typical active current: 8 mA @ f = fmax (70-ns speed).
  • Ultra low standby power.
  • Automatic power-down when deselected www. DataSheet4U. com.
  • CMOS for optimum speed/power.
  • Offered in a 48-ball BGA package can be put into standby mode when deselected (CE HIGH or both BHE and BLE.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CYK256K16MCCB MoBL3™ 4-Mbit (256K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax (70-ns speed) • Ultra low standby power • Automatic power-down when deselected www.DataSheet4U.com • CMOS for optimum speed/power • Offered in a 48-ball BGA package can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW).
Published: |