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Cypress Semiconductor Electronic Components Datasheet

CY7C225A Datasheet

512 x 8 Registered PROM

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1CY7C225A
CY7C225A
512 x 8 Registered PROM
Features
• CMOS for optimum speed/power
• High speed
— 25 ns address set-up
— 12 ns clock to output
• Low power
— 495 mW (Commercial)
www.DataSheet4U.co6m60 mW (Military)
• Synchronous and asynchronous output enables
• On-chip edge-triggered registers
• Buffered common PRESET and CLEAR inputs
• EPROM technology, 100% programmable
• Slim 300-mil, 24-pin plastic or hermetic DIP, 28-pin LCC,
or 28-pin PLCC
5V ±10% VCC, commercial and military
• TTL-compatible I/O
• Direct replacement for bipolar PROMs
• Capable of withstanding greater than 2001V static
discharge
Functional Description
The CY7C225A is a high-performance 512-word by 8-bit
electrically programmable read only memory packaged in a
slim 300-mil plastic or hermetic DIP, 28-pin leadless chip
carrier, and 28-pin PLCC. The memory cells utilize proven
EPROM floating gate technology and byte-wide intelligent
programming algorithms.
The CY7C225A replaces bipolar devices and offers the advan-
tages of lower power, superior performance, and high
programming yield. The EPROM cell requires only 12.5V for
the supervoltage and low current requirements allow for gang
programming. The EPROM cells allow for each memory
location to be tested 100%, as each location is written into,
erased, and repeatedly exercised prior to encapsulation. Each
PROM is also tested for AC performance to guarantee that
after customer programming the product will meet AC specifi-
cation limits.
Logic Block Diagram
Pin Configurations
A0
A1
A2
ROW
ADDRESS
PROGRAMMABLE
ARRAY
MULTIPLEXER
A3
A4
ADDRESS
A5 DECODER
A6
A7 COLUMN
ADDRESS
A8
8-BIT
EDGE-
TRIGGERED
REGISTER
DIP
Top View
O7
A7 1
24 VCC
O6
A6 2
23 A8
A5 3
22 PS
O5
A4 4
A3 5
21 E
20 CLR
O4
A2 6
19 ES
A1 7
18 CP
A0 8
17 O7
O3
O0 9
16 O6
O1 10
15 O5
O2
O2 11
14 O4
GND 12
13 O3
O1
LCC/PLCC
PS
S R CP
O0
Top View
CLR
CP
ES
E
4 3 2 1 28 27 26
A4 5
A3 6
25 E
24 CLR
A2 7
23 ES
A1 8
22 CP
A0 9
21 NC
NC 10
20 O7
O0 11
19 O6
12 13141516 1718
Selection Guide
Minimum Address Set-Up Time
Maximum Clock to Output
Maximum Operating
Current
Commercial
Military
7C225A-25
25
12
90
7C225A-30
30
15
90
7C225A-40
40
25
120
Unit
ns
ns
mA
mA
Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600
Document #: 38-04001 Rev. *B
Revised October 8, 2002


Cypress Semiconductor Electronic Components Datasheet

CY7C225A Datasheet

512 x 8 Registered PROM

No Preview Available !

CY7C225A
Maximum Ratings[1]
DC Program Voltage (Pins 7, 18, 20) ........................... 13.0V
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current..................................................... >200 mA
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12).................................................−0.5V to +7.0V
Operating Range
Range
Ambient
Temperature
VCC
DC Voltage Applied to Outputs
in High Z State .....................................................−0.5V to +7.0V
DC Input Voltage .................................................−3.0V to +7.0V
www.DataSheet4U.com
Commercial
Military[2]
0°C to +70°C
55°C to +125°C
5V ± 10%
5V ± 10%
Electrical Characteristics Over the Operating Range[3,4]
Parameter
Description
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = 4.0 mA
VIN = VIH or VIL
2.4 V
VOL
Output LOW Voltage
VCC = Min., IOL = 16 mA
VIN = VIH or VIL
0.4 V
VIH Input HIGH Level
Guaranteed Input Logical HIGH Voltage for
All Inputs
2.0
V
VIL Input LOW Level
Guaranteed Input Logical LOW Voltage for All
Inputs
0.8 V
IIX
Input Leakage Current
GND < VIN < VCC
10 +10 µA
VCD Input Clamp Diode Voltage Note 4
IOZ
Output Leakage Current
GND < VOUT < VCC, Output Disabled[5]
10 +10 µA
IOS Output Short Circuit Current VCC = Max., VOUT = 0.0V[6]
20 90 mA
ICC
Power Supply Current
IOUT = 0 mA
VCC = Max.
Commercial
Military
90 mA
120
VPP
IPP
VIHP
Programming Supply Voltage
Programming Supply Current
Input HIGH Programming
Voltage
12 13 V
50 mA
3.0 V
VILP Input LOW Programming
Voltage
0.4 V
Capacitance[4]
Parameter
Description
Test Conditions
Max.
CIN
COUT
Input Capacitance
Output Capacitance
TA = 25°C, f = 1 MHz,
VCC =5.0V
10
10
Notes:
1. The Voltage on any input or I/O pin cannot exceed the power pin during power-up.
2. TA is the “instant on” case temperature.
3. See the last page of this specification for Group A subgroup testing information.
4. See the “Introduction to CMOS PROMs” section of the Cypress Data Book for general information on testing.
5. For devices using the synchronous enable, the device must be clocked after applying these voltages to perform this measurement.
6. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds.
Unit
pF
pF
Document #: 38-04001 Rev. *B
Page 2 of 9


Part Number CY7C225A
Description 512 x 8 Registered PROM
Maker Cypress Semiconductor
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