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Cypress Semiconductor Electronic Components Datasheet

CY7C1483V25 Datasheet

72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM

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CY7C1481V25
CY7C1483V25
CY7C1487V25
72-Mbit (2M x 36/4M x 18/1M x 72)
Flow-Through SRAM
Features
Functional Description[1]
• Supports 133 MHz bus operations
• 2M x 36/4M x 18/1M x 72 common IO
• 2.5V core power supply (VDD)
• 2.5V or 1.8V IO supply (VDDQ)
• Fast clock-to-output time
— 6.5 ns (133-MHz version)
• Provide high-performance 2-1-1-1 access rate
• User selectable burst counter supporting Intel® Pentium®
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self timed write
• Asynchronous output enable
• CY7C1481V25, CY7C1483V25 available in
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-ball FBGA package. CY7C1487V25
available in Pb-free and non-Pb-free 209-ball FBGA
package
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode option
The CY7C1481V25/CY7C1483V25/CY7C1487V25 is a 2.5V,
2M x 36/4M x 18/1M x 72 Synchronous Flow-through SRAM
designed to interface with high-speed microprocessors with
minimum glue logic. Maximum access delay from clock rise is
6.5 ns (133-MHz version). A 2-bit on-chip counter captures the
first address in a burst and increments the address automati-
cally for the rest of the burst access. All synchronous inputs
are gated by registers controlled by a positive edge triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address pipelining Chip Enable
(CE1), depth expansion Chip Enables (CE2 and CE3), Burst
Control inputs (ADSC, ADSP, and ADV), Write Enables (BWx,
and BWE), and Global Write (GW). Asynchronous inputs
include the Output Enable (OE) and the ZZ pin.
The CY7C1481V25/CY7C1483V25/CY7C1487V25 enables
either interleaved or linear burst sequences, selected by the
MODE input pin. A HIGH selects an interleaved burst
sequence, while a LOW selects a linear burst sequence. Burst
accesses can be initiated with the Processor Address Strobe
(ADSP) or the cache Controller Address Strobe (ADSC)
inputs. Address advancement is controlled by the Address
Advancement (ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1481V25/CY7C1483V25/CY7C1487V25 operates
from a +2.5V core power supply while all outputs may operate
with either a +2.5 or +1.8V supply. All inputs and outputs are
JEDEC-standard JESD8-5-compatible.
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
133 MHz
6.5
305
120
100 MHz
8.5
275
120
Unit
ns
mA
mA
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Note
1. For best practices recommendations, refer to the Cypress application note System Design Guidelines at www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05281 Rev. *H
• 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Revised April 24, 2007
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Cypress Semiconductor Electronic Components Datasheet

CY7C1483V25 Datasheet

72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM

No Preview Available !

CY7C1481V25
CY7C1483V25
CY7C1487V25
Logic Block Diagram – CY7C1481V25 (2M x 36)
A 0, A1, A
MODE
ADV
CLK
ADSC
ADSP
BW D
BW C
BW B
BW A
BWE
GW
CE1
CE2
CE3
OE
ADDRESS
REGISTER
A [1:0]
BURST Q1
COUNTER
AND LOGIC
CLR Q0
DQ D, DQP D
BYTE
WRITE REGISTER
DQ C, DQP C
BYTE
WRITE REGISTER
DQ B, DQP B
BYTE
WRITE REGISTER
DQ A, DQPA
BYTE
WRITE REGISTER
ENABLE
REGISTER
ZZ
SLEEP
CONTROL
Logic Block Diagram – CY7C1483V25 (4M x 18)
A 0,A1,A
MODE
ADV
CLK
ADSC
ADSP
BW B
ADDRESS
REGISTER
A[1:0]
BURST Q1
COUNTER AND
LOGIC
CLR Q0
DQ B,DQP B
WRITE REGISTER
BW A
BWE
GW
www.DataShCEe1et4U.com
CE 2
CE 3
OE
DQ A,DQP A
WRITE REGISTER
ENABLE
REGISTER
DQ D, DQP D
BYTE
WRITE REGISTER
DQ C, DQP C
BYTE
WRITE REGISTER
DQ B, DQP B
BYTE
WRITE REGISTER
DQ A, DQP A
BYTE
WRITE REGISTER
DQ B,DQP B
WRITE DRIVER
DQ A,DQP A
WRITE DRIVER
MEMORY
ARRAY
SENSE
AMPS
OUTPUT
BUFFERS
DQ s
DQP A
DQP B
DQP C
DQP D
INPUT
REGISTERS
MEMORY
ARRAY
SENSE
AMPS
OUTPUT
BUFFERS
DQs
DQP A
DQP B
INPUT
REGISTERS
ZZ SLEEP
CONTROL
Document #: 38-05281 Rev. *H
Page 2 of 30
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Part Number CY7C1483V25
Description 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
Maker Cypress Semiconductor
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