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Cypress Semiconductor Electronic Components Datasheet

CY7C1475V25 Datasheet

(CY7C147xV25) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM

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PRELIMINARY
CY7C1471V25
CY7C1473V25
CY7C1475V25
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
with NoBL™ Architecture
Features
• No Bus Latency™ (NoBL™) architecture eliminates
dead cycles between write and read cycles.
• Can support up to 133-MHz bus operations with zero
wait states
• Data is transferred on every clock
• Pin compatible and functionally equivalent to ZBT™
devices
• Internally self-timed output buffer control to eliminate
the need to use OE
• Registered inputs for flow-through operation
• Byte Write capability
• 2.5V/1.8V I/O power supply
• Fast clock-to-output times
— 6.5 ns (for 133-MHz device)
— 8.5 ns (for 100-MHz device)
• Clock Enable (CEN) pin to enable clock and suspend
operation
• Synchronous self-timed writes
• Asynchronous Output Enable
• Offered in JEDEC-standard lead-free 100 TQFP, and
165-ball fBGA packages for CY7C1471V25 and
CY7C1473V25. 209-ball fBGA package for
CY7C1475V25.
• Three chip enables for simple depth expansion.
• Automatic Power-down feature available using ZZ
mode or CE deselect.
• JTAG boundary scan for BGA and fBGA packages
• Burst Capability—linear or interleaved burst order
• Low standby power
Functional Description[1]
The CY7C1471V25, CY7C1473V25 and CY7C1475V25 are
2.5V, 2M x 36/4M x 18/1M x 72 Synchronous Flow-through
Burst SRAMs designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait states. The CY7C1471V25, CY7C1473V25 and
CY7C1475V25 are equipped with the advanced No Bus
Latency (NoBL) logic required to enable consecutive
Read/Write operations with data being transferred on every
clock cycle. This feature dramatically improves the throughput
of data through the SRAM, especially in systems that require
frequent Write-Read transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 6.5 ns (133-MHz
device).
Write operations are controlled by the two or four Byte Write
Select (BWX) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.
Selection Guide
133 MHz
100 MHz
Maximum Access Time
6.5 8.5
Maximum Operating Current
305 275
Maximum CMOS Standby Current
120 120
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Unit
ns
mA
mA
Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 • 408-943-2600
Document #: 38-05287 Rev. *E
Revised December 5, 2004


Cypress Semiconductor Electronic Components Datasheet

CY7C1475V25 Datasheet

(CY7C147xV25) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM

No Preview Available !

www.DataSheet4U.com
PRELIMINARY
CY7C1471V25
CY7C1473V25
CY7C1475V25
Logic Block Diagram – CY7C1471V25 (2M x 36)
A0, A1, A
MODE
CLK C
CEN
CE
ADDRESS
REGISTER
A1
A0
D1
D0
ADV/LD
C
WRITE ADDRESS
REGISTER
Q1
Q0
A1'
A0'
BURST
LOGIC
ADV/LD
BWA
BWB
BWC
BWD
WE
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
OE
CE1
READ LOGIC
CE2
CE3
ZZ
SLEEP
CONTROL
Logic Block Diagram – CY7C1473V25 (4M x 18)
INPUT E
REGISTER
O
U
T
DP
AU
TT
A
B
SU
TF
EF
EE
RR
IS
NE
G
DQs
DQPA
DQPB
DQPC
DQPD
A0, A1, A
MODE
CLK C
CEN
CE
ADV/LD
BWA
BWB
WE
OE
CE1
CE2
CE3
ZZ
ADDRESS
REGISTER
A1
A0
D1
D0
ADV/LD
C
WRITE ADDRESS
REGISTER
Q1
Q0
A1'
A0'
BURST
LOGIC
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
READ LOGIC
INPUT E
REGISTER
O
U
T
DP
AU
TT
A
B
SU
TF
EF
EE
RR
IS
NE
G
DQs
DQPA
DQPB
SLEEP
CONTROL
Document #: 38-05287 Rev. *E
Page 2 of 30


Part Number CY7C1475V25
Description (CY7C147xV25) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
Maker Cypress Semiconductor
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